Graphene has become a promising material in the semiconductor industry to replace silicon-based devices due to its excellent electrical performance, and has caused a research boom in the scientific community in recent years. How to transform metallic graphene into a semiconductor with a real band gap is the key problem for graphene to enter the semiconductor market.
In the research, scientists found that there is a kind of white graphite in nature, namely boron nitride BN. It has many properties similar to graphite and is completely different from graphene. Hexagonal boron nitride (HBN) is an excellent insulator. Researchers have found that using large-scale hexagonal boron nitride (HBN) two-dimensional material as a graphene substrate can greatly improve graphite. The electron mobility of alkene, by precisely manipulating the stacking direction of the crystal layers, greatly changes the electron operation in GBN heterojunctions, making this material really have practical value for application.
The boron nitride crystal produced by Juna Group has a purity of up to 99.995%. Currently, boron nitride crystals with higher purity and larger size are still being developed. At present, they have also obtained a positive response in the market. Tsinghua University, Nanjing University and other universities Both have cooperated with the Juna Group, and some of the results have been published on Nature.
According to optimistic estimates, after further design improvements, the material will be used in the manufacture of high-frequency electronic devices. Perhaps, the time to promote this multi-layer composite material system in the field of electronic materials is about to come, and the time for the replacement of electronic materials in the field of electronic materials may not be far away.