Topological insulators are a new type of quantum state of matter discovered in recent years, and have great application prospects in energy-lossless transmission, spintronics, and quantum computers. In addition to the exotic topological surface states that are not scattered by defects and nonmagnetic impurities, the introduction of a wire defect of a screw dislocation in a topological insulator may also generate a pair of topologically protected 1D helical states, creating a perfectly conductive wire aisle. The graphene-like layered bismuth selenide Bi2Se3 is considered to be one of the most promising topological insulators due to its simple band structure and energy fluctuation band gap much larger than room temperature. Based on the characteristic controllable preparation method, the research group of Professor Zeng Jie, Hefei National Laboratory for Microscale Matter Science, University of Science and Technology of China, and the School of Chemistry and Materials Science, starting from the kinetic theory of crystal growth, maintains the reaction system at a very low temperature. Under saturated conditions, the defects of screw dislocations are generated in the nucleation process of bismuth selenide, thereby inducing bidirectional helical growth of layered materials and breaking the intrinsic crystal growth mode of bismuth selenide. In addition, the researchers also synthesized helical structures with different degrees of development by controlling the growth rate of the helical, which clarified the helical growth mechanism of two-dimensional layered materials. This study provides a material basis for the realization of one-dimensional topological helical states, which will help promote new developments in bismuth selenide in topological insulators, thermoelectrics, and catalysis. In addition, exploring the way of helical growth also has important guiding significance for synthesizing the helical structure of other 2D layered materials, thereby modulating the physical properties of the materials.

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